smd type transistors 1 www.kexin.com.cn silicon pnp epitaxial 2SB1002 features low frequency power amplifier electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector to base breakdown voltage v (br)cbo i c =-10a,i e =0 -70 v collector to emitter breakdown voltage v (br)ceo i c =-1ma,r be = -50 v emitter to base breakdown voltage v (br)ebo i e =-10a,i c =0 -6 v collector cutoff current i cbo v cb = -50v, i e =0 -0.1 a emitter cutoff current i ebo v eb =-4v,i c =0 -0.1 a dc current transfer ratio h fe v ce =-2v,i c = -0.1 a 100 320 collector to emitter saturation voltage v ce(sat) i c =-1a,i b =-0.1a -0.6 v base to emitter saturation voltage v be(sat) i c =-1a,i b =-0.1a -1.2 v gain bandwidth product f t v ce =-2v,i c = -10 ma 150 mhz collector output capacitance c ob v cb =-10v,i e =0,f=1mhz 35 pf absolute maximum ratings ta = 25 parameter symbol rating unit collector to base voltage v cbo -70 v collector to emitter voltage v ceo -50 v emitter to base voltage v ebo -6 v collector current i c -1 a peak collector current i cp * 1 -1.5 a collector power dissipation p c * 2 1w junction temperature tj 150 storage temperature t stg -55to+150 *1. pw 10 ms; d 0.02. *2. value on the alumina ceramic board (12.5 x 20 x 0.7 mm) h fe classification marking ch cj hfe 100 200 160 320
|
